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Absolute Maximum Ratings
Drain-Source Voltage
0.5
215
5
5
35
62.5
-55~+150
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
Total Power Dissipation
ID@TC=100
ID@TC=25
IDM
PD@TC=25
1
C
o
C
o
C
o
W/ C
C
o
o
Gate-Source Voltage
Parameter
Symbol
Ratings
Unit
A
V
V
A
A
W
VDS
VGS
25
± 20
Single Pulse Avalanche Energy
Avalanche Current
2
EAS
IAR
A
mJ
240
31
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-case
/W
C
Rthj-c
2.0
Thermal Resistance Junction-ambient
/W
C
Rthj-a
Max.
Max.
110
o
o
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
Description
The SSD55N03 provide the designer with the best combination
Features
The TO-252 is universally preferred for all commercial-industrial
surface mount applications and
suited for low voltage applications
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
such as DC/DC converters.
TO-252
S
D
G
Elektronische Bauelemente
SSD55N03
55A, 25V,RDS(ON)6m
N-Channel Enhancement Mode Power Mos.FET
Ω
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
6.40
6.80
G
0.50
0.70
B
5.20
5.50
H
2.20
2.40
C
6.80
7.20
J
0.45
0.55
D
2.20
2.80
K
0
0.15
E
2.30 REF.
L
0.90
1.50
F
0.70
0.90
M
5.40
5.80
S
0.60
0.90
R
0.80
1.20
*
Repetitive Avalanche Rated
* Dynamic dv/dt Rating
*
Simple Drive Requirement
*
Fast Switching
RoHS Compliant Product
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