전자부품 데이터시트 검색엔진 |
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MPVZ4006G 데이터시트(PDF) 3 Page - Freescale Semiconductor, Inc |
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MPVZ4006G 데이터시트(HTML) 3 Page - Freescale Semiconductor, Inc |
3 / 12 page MPVZ4006G Sensors Freescale Semiconductor 3 ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION, AND SIGNAL CONDITIONING The performance over temperature is achieved by integrating the shear-stress strain gauge, temperature compensation, calibration and signal conditioning circuitry onto a single monolithic chip. Figure 2 illustrates the Differential or Gauge configuration in the basic chip carrier (Case 482). A gel die coat isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the silicon diaphragm. The MPVZ4006G series sensor operating characteristics are based on use of dry air as pressure media. Media, other than dry air, may have adverse effects on sensor performance and long-term reliability. Internal reliability and qualification test for dry air, and other media, are available from the factory. Contact the factory for information regarding media tolerance in your application. Figure 3 shows the recommended decoupling circuit for interfacing the output of the integrated sensor to the A/D input of a microprocessor or microcontroller. Proper decoupling of the power supply is recommended. Figure 4 and Figure 5 shows the sensor output signal relative to pressure input. Typical, minimum and maximum output curves are shown for operation over a temperature range of 10 °C to 60°C using the decoupling circuit shown in Figure 3. The output will saturate outside of the specified pressure range. Figure 2. Cross Sectional Diagram SOP (Not to Scale) Figure 3. Recommended Power Supply Decoupling and Output Filtering Recommendations (For additional output filtering, please refer to Application Note AN1646.) Figure 4. Output versus Pressure Differential at ±5.0% VFSS (without auto zero, note 5 in Operating Characteristics) Figure 5. Output versus Pressure Differential at ±2.46% VFSS (with auto zero, note 5 in Operating Characteristics) Fluorosilicone Gel Die Coat Wire Bond Differential Sensing Element Thermoplastic Case Stainless Steel Cap Lead Frame P1 P2 Die Bond Die 1.0 μF IPS 470 pF OUTPUT Vs +5 V 0.01 μFGND Vout Differential Pressure (kPa) 4.0 3.0 2.0 1.0 0 02.0 4.5 4.0 6.0 5.0 3.5 2.5 1.5 0.5 VS = 5.0 Vdc TEMP = 10 to 60°C Transfer Function (kPa): Vout = VS*[(0.1533*P) + 0.053] ± 5.0% VFSS Differential Pressure (kPa) 4.0 3.0 2.0 1.0 0 02.0 4.5 4.0 6.0 MAX MIN 5.0 3.5 2.5 1.5 0.5 VS = 5.0 Vdc TEMP = 10 to 60°C TYPICAL Transfer Function (kPa): Vout = VS*[(0.1533*P) + 0.053] ± 2.46% VFSS MAX MIN TYPICAL |
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