전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

STB15N25 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 STB15N25
상세설명  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB15N25 데이터시트(HTML) 2 Page - STMicroelectronics

  STB15N25 Datasheet HTML 1Page - STMicroelectronics STB15N25 Datasheet HTML 2Page - STMicroelectronics STB15N25 Datasheet HTML 3Page - STMicroelectronics STB15N25 Datasheet HTML 4Page - STMicroelectronics STB15N25 Datasheet HTML 5Page - STMicroelectronics STB15N25 Datasheet HTML 6Page - STMicroelectronics  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ < 1%)
15
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 25 V)
40
mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max,
δ < 1%)
10
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100
oC, pulse width limited by Tj max, δ < 1%)
10
A
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
250
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating x 0.8
Tc = 125
o C
250
1000
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 20 V
±100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS = VGS
ID = 250
µA
234
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 7.5 A
VGS = 10 V
ID = 7.5 A
Tc = 100
oC
0.25
0.5
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max
VGS = 10 V
15
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 7.5 A
5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
1600
270
50
pF
pF
pF
STB15N25
2/6


유사한 부품 번호 - STB15N25

제조업체부품명데이터시트상세설명
logo
STMicroelectronics
STB15N65M5 STMICROELECTRONICS-STB15N65M5 Datasheet
1Mb / 19P
   Excellent switching performance
November 2012 Rev 1
logo
Inchange Semiconductor ...
STB15N65M5-2 ISC-STB15N65M5-2 Datasheet
313Kb / 2P
   isc N-Channel MOSFET Transistor
logo
STMicroelectronics
STB15N80K5 STMICROELECTRONICS-STB15N80K5 Datasheet
1Mb / 22P
   N-channel 800 V, 0.3 ohm typ., 14 A SuperMESH 5 Power MOSFET
logo
Inchange Semiconductor ...
STB15N80K5 ISC-STB15N80K5 Datasheet
294Kb / 2P
   isc N-Channel MOSFET Transistor
logo
STMicroelectronics
STB15NK50Z STMICROELECTRONICS-STB15NK50Z Datasheet
672Kb / 14P
   N-CHANNEL500V-0.30ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET
More results

유사한 설명 - STB15N25

제조업체부품명데이터시트상세설명
logo
STMicroelectronics
STH60N10 STMICROELECTRONICS-STH60N10 Datasheet
246Kb / 11P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP15N05L STMICROELECTRONICS-STP15N05L Datasheet
201Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
November 1996
IRF630FI STMICROELECTRONICS-IRF630FI Datasheet
190Kb / 6P
   N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP3N50XI STMICROELECTRONICS-STP3N50XI Datasheet
289Kb / 7P
   N-CHANNEL enhancement mode power mos transistor
STD2NA60 STMICROELECTRONICS-STD2NA60 Datasheet
172Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STD3N30L STMICROELECTRONICS-STD3N30L Datasheet
170Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STD3NA50 STMICROELECTRONICS-STD3NA50 Datasheet
172Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP53N08 STMICROELECTRONICS-STP53N08 Datasheet
77Kb / 5P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP5N30L STMICROELECTRONICS-STP5N30L Datasheet
198Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP32N05L STMICROELECTRONICS-STP32N05L Datasheet
201Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP32N06L STMICROELECTRONICS-STP32N06L Datasheet
201Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
More results


Html Pages

1 2 3 4 5 6


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com