전자부품 데이터시트 검색엔진 |
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STB60NE03L-10 데이터시트(PDF) 3 Page - STMicroelectronics |
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STB60NE03L-10 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 8 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr Turn-on Time Rise Time VDD =15 V ID =30 A RG =4.7 Ω VGS =5 V (see test circuit, figure 3) 35 240 50 320 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =24 V ID =60 A VGS =5 V 62 20 31 85 nC nC nC SWITCHING OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =24 V ID =60 A RG =4.7 Ω VGS =5 V (see test circuit, figure 5) 60 80 150 80 110 200 ns ns ns SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 60 240 A A VSD ( ∗) Forward On Voltage ISD =60 A VGS =0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A di/ dt = 100 A/ µs VDD =24 V Tj =150 oC (see test circuit, figure 5) 70 0. 13 4 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STB60NE03L-10 3/8 |
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