전자부품 데이터시트 검색엔진 |
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STB6NA80 데이터시트(PDF) 3 Page - STMicroelectronics |
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STB6NA80 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 10 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter T est Con ditio ns Min . T yp. Max. Uni t td(on) tr Turn-on Time Rise Time VDD = 400 V ID =3 A RG =47 Ω VGS =10 V (see test circuit, figure 3) 35 95 45 125 ns ns (di/ dt)on Turn-on Current Slope VDD = 640 V ID =6 A RG =47 Ω VGS =10 V (see test circuit, f igure 5) 170 A/ µs Qg Qgs Qgd Tot al Gate Charge Gat e-Source Charge Gat e-Drain Charge VDD =640 V ID =6 A VGS =10 V 58 8 27 78 nC nC nC SWITCHING OFF Symbo l Parameter T est Con ditio ns Min . T yp. Max. Uni t tr(Voff) tf tc Off -volt age Rise Time Fall Time Cross-over Time VDD = 640 V ID =6 A RG =47 Ω VGS =10 V (see test circuit, figure 5) 90 25 125 120 35 165 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter T est Con ditio ns Min . T yp. Max. Uni t ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 5.7 23 A A VSD ( ∗) Forward On Voltage ISD =6 A VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6 A di/dt = 100 A/ µs VDD =100 V Tj =150 oC (see test circuit, figure 5) 850 15 35 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STB6NA80 3/10 |
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