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STB8NC50 데이터시트(PDF) 3 Page - STMicroelectronics |
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STB8NC50 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STB8NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 250V, ID = 4A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 19 ns tr Rise Time 14 ns Qg Total Gate Charge VDD = 400V, ID = 8A, VGS = 10V 36 45 nC Qgs Gate-Source Charge 5 nC Qgd Gate-Drain Charge 18.2 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 8A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 13 ns tf Fall Time 15 ns tc Cross-over Time 26 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 8 A ISDM (2) Source-drain Current (pulsed) 32 A VSD (2) Forward On Voltage ISD = 8A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 8A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 470 ns Qrr Reverse Recovery Charge 3.2 µC IRRM Reverse Recovery Current 13.7 A Safe Operating Area Thermal Impedance |
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