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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STC06IE170HV 데이터시트(PDF) 1 Page - STMicroelectronics |
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STC06IE170HV 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  PRELIMINARY DATA This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. May 2007 Rev 2 1/8 8 STC06IE170HV Emitter switched bipolar transistor ESBT® 1700V - 6A - 0.15 Ω Features ■ High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1700 V ■ Very low CISS driven by RG = 47Ω ■ Very low turn-off cross over time Description The STC06IE170HV is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies. Application ■ Auxiliary SMPS for three phase mains Internal schematic diagram VCS(ON) IC RCS(ON) 0.7V 6A 0.15 Ω TO247-4L HV 1 2 3 4 www.st.com Order code Part number Marking Package Packaging STC06IE170HV C06IE170HV TO247-4L HV Tube |
유사한 부품 번호 - STC06IE170HV |
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