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STB9NC60 데이터시트(PDF) 3 Page - STMicroelectronics |
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STB9NC60 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STB9NC60 / STPBNC60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 300V, ID = 4.5 A RG =4.7Ω VGS = 10V (see test circuit, Figure 3) 20 ns tr Rise Time 16 ns Qg Total Gate Charge VDD = 480V, ID = 9.0 A, VGS = 10V 55 77 nC Qgs Gate-Source Charge 4.5 nC Qgd Gate-Drain Charge 31 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 4.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 64 32 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 9.0 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 19 13 32 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 9.0 A ISDM (2) Source-drain Current (pulsed) 36 A VSD (1) Forward On Voltage ISD = 9 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 9 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 600 ns Qrr Reverse Recovery Charge 4.7 µC IRRM Reverse Recovery Current 15.5 A Thermal Impedance Safe Operating Area |
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