E07DE220 datasheet(3/7 Pages) STMICROELECTRONICS

부품명	E07DE220

상세설명	Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07??power module

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STE07DE220

Electrical characteristics

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2

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICS(SS)

Collector-source

current (VBS =VGS = 0)

VCS = 2200 V

100

µA

IBS(OS)

Base-source current

(IC =0, VGS = 0)

VBS = 40 V

10

µA

ISB(OS)

Source-base current

(IC =0, VGS = 0)

VSB = 9 V

100

µA

IGS(OS)

Gate-source leakage

(VBS = 0)

VGS = ± 20 V

500

nA

VCS(ON)

Collector-source ON

voltage

VGS = 10 V IC = 7 A

IB = 1.4 A

VGS = 10 V IC = 3.5 A IB = 0.35 A

0.5

0.4

V

hFE

DC current gain

VGS = 10 V VCS = 1 V IC = 7 A

VGS = 10 V VCS = 1 V IC = 3.5 A

9

15

VBS(ON)

Base-source ON

voltage

VGS = 10 V IC = 7 A

IB = 1.4 A

VGS = 10 V IC = 3.5 A IB = 0.35 A

1

0.8

V

VGS(th)

Gate threshold voltage

VBS = VGS

IB = 250 µA

33.7

4.5

V

Ciss

Input capacitance

(VGS = VCB = 0)

VCS = 25 V f = 1 MHz

t.b.d.

pF

QGS(tot)

Gate-source charge

(VCB = 0)

VCS = 25 V VGS = 10 V

IC = 7 A

t.b.d.

nC

ts

tf

Inductive load

Storage time

Fall time

VGS = 10 V

RG = 47 Ω

VClamp = 1760 V

tp = 4 µs

IC = 3.5 A

IB = 0.7 A

t.b.d.

ns

ts

tf

Inductive load

Storage time

Fall time

VGS = 10 V

RG = 47 Ω

VClamp = 1760 V

tp = 4 µs

IC = 3 .5 A

IB = 0.35 A

t.b.d.

ns

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