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STGB8NC60KD 데이터시트(PDF) 4 Page - STMicroelectronics |
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STGB8NC60KD 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD 4/18 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE= 0) IC= 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC = 3 A VGE= 15 V, IC = 3 A, TC = 125°C 2.2 1.8 2.75 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 4.5 6.5 V ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TC = 125 °C 150 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE= ±20 V ±100 nA gfs (1) 1. Pulse duration = 300 us, duty cycle 1.5 % Forward transconductance VCE = 15 V, IC= 3 A 1.9 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 380 46 8.5 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 3 A, VGE = 15 V, (see Figure 20) 19 5 9 nC nC nC Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 3 A RG= 10 Ω, VGE= 15 V (see Figure 21) 17 6 655 ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC =3 A RG= 10 Ω, VGE= 15 V, TC = 125 °C (see Figure 21) 16.5 6.5 575 ns ns A/µs |
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