STP10NA40 datasheet(3/10 Pages) STMICROELECTRONICS

부품명	STP10NA40

상세설명	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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3 / 10 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD =200 V

ID =5 A

RG =47

Ω

VGS =10 V

(see test circuit, figure 3)

35

115

50

155

ns

(di/dt) on

Turn-on Current Slope

VDD =320 V

ID =10 A

RG =47

Ω

VGS =10 V

(see test circuit, figure 5)

250

A/

µs

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 320 V

ID =10 A

VGS =10 V

54

8

27

75

nC

SWITCHING OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =320 V

ID =10 A

RG =47

Ω VGS =10 V

(see test circuit, figure 5)

75

30

120

105

45

160

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

ISD

I SDM(

•)

Source-drain Current

(pulsed)

10

40

A

VSD (

∗)

Forward On Volt age

ISD =10 A

VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 10 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

oC

(see test circuit, figure 5)

470

6.5

27.5

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Areas for TO-220

Safe Operating Areas for ISOWATT220

STP10NA40/FI

3/10

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STP10NA40 데이터시트(PDF) 3 Page - STMicroelectronics

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유사한 부품 번호 - STP10NA40

유사한 설명 - STP10NA40

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