전자부품 데이터시트 검색엔진 |
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TS4990IST 데이터시트(PDF) 7 Page - STMicroelectronics |
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TS4990IST 데이터시트(HTML) 7 Page - STMicroelectronics |
7 / 32 page TS4990 Electrical characteristics 7/32 Table 6. Electrical characteristics when VCC = 2.6V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit ICC Supply current No input signal, no load 3.1 6 mA ISTBY Standby current (1) No input signal, VSTBY = GND, RL = 8Ω 1. Standby mode is active when VSTBY is tied to GND. 10 1000 nA Voo Output offset voltage No input signal, RL = 8Ω 110 mV Pout Output power THD = 1% max, F = 1kHz, RL = 8Ω 220 300 mW THD + N Total harmonic distortion + noise Pout = 200mWrms, AV = 2, 20Hz ≤ F ≤ 20kHz, RL =8Ω 0.1 % PSRR Power supply rejection ratio(2) RL = 8Ω, AV = 2, Vripple = 200mVpp, input grounded F = 217Hz F = 1kHz 2. All PSRR data limits are guaranteed by production sampling tests. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon VCC. 55 55 60 62 dB tWU Wake-up time (Cb = 1µF) 125 150 ms tSTBY Standby time (Cb = 1µF) 10 µs VSTBYH Standby voltage level high 1.2 V VSTBYL Standby voltage level low 0.4 V ΦM Phase margin at unity gain RL = 8Ω, CL = 500pF 65 Degrees GM Gain margin RL = 8Ω, CL = 500pF 15 dB GBP Gain bandwidth product RL = 8Ω 1.5 MHz ROUT-GND Resistor output to GND (VSTBY ≤VSTBYL) Vout1 Vout2 6 46 k Ω |
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