STP21N06L datasheet(3/10 Pages) STMICROELECTRONICS

부품명	STP21N06L

상세설명	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD =30 V

ID =10.5A

RG =50

Ω

VGS =5 V

(see test circuit, figure 3)

65

370

95

530

ns

(di/dt) on

Turn-on Current Slope

VDD =40 V

ID =21 A

RG =50

Ω

VGS =5 V

(see test circuit, figure 5)

130

A/

µs

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =40 V

ID =21 A

VGS =5 V

18

6

10

26

nC

SWITCHING OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =40 V

ID =21 A

RG =50

Ω

VGS =5 V

(see test circuit, figure 5)

70

100

180

100

150

260

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

ISD

I SDM(

•)

Source-drain Current

(pulsed)

21

84

A

VSD (

∗)

Forward On Volt age

ISD =21 A

VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 21 A

di/dt = 100 A/

µs

VDD =30 V

Tj =150

oC

(see test circuit, figure 5)

65

0.13

4

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Areas

STP21N06L/FI

3/10

유사한 부품 번호 - STP21N06L

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STP21N05L	197Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics	STP21N05LFI	197Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

More results

유사한 설명 - STP21N06L

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STP21N05L	197Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STK12N05L	180Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STD12N05L	176Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STP50N06L	199Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STP55N06L	213Kb / 7P	N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STD17N05L	172Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STD8N10L	381Kb / 9P	N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STD15N06L	140Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STP20N10L	203Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STP19N06L	142Kb / 7P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

More results

STP21N06L 데이터시트(PDF) 3 Page - STMicroelectronics

STP21N06L 데이터시트(HTML) 3 Page - STMicroelectronics

유사한 부품 번호 - STP21N06L

유사한 설명 - STP21N06L

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