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STP3020L 데이터시트(PDF) 3 Page - STMicroelectronics |
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STP3020L 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 8 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Delay T ime Rise Time VDD =15 V ID =19 A RG =4.7 Ω VGS =4.5 V (Resistive Load, see fig. 3) 28 220 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD =24 V ID =38 A VGS =5 V 21 9 11 29 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(off) tf Turn-off Delay T ime Fall T ime VDD =15 V ID =19 A RG =4.7 Ω VGS =4.5 V (Resistive Load, see fig. 3) 45 35 ns ns tr(Voff) tf tc Off -volt age Rise T ime Fall T ime Cross-over Time VDD =24 V I D =38 A RG =4.7 Ω VGS =4.5 V (Induct ive Load, see fig. 5) 30 85 125 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 40 160 A A VSD ( ∗)Forward On Voltage ISD =40 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 38 A di/dt = 100 A/ µs VDD =15 V Tj =150 oC (see t est circuit, f ig. 5) 45 60 2.5 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STP3020L 3/8 |
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