STE45NK80ZD datasheet(3/13 Pages) STMICROELECTRONICS

부품명	STE45NK80ZD

상세설명	N-channel 800V - 0.11廓 - 45A ISOTOP SuperFREDmesTM MOSFET

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STE45NK80ZD

Electrical ratings

3/13

1

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

800

V

VDGR

Drain-gate voltage (RGS = 20 kW)

800

V

VGS

Gate- source voltage

± 30

V

ID

Drain Current (continuous) at TC = 25°C

(Steady State)

45

A

ID

Drain Current (continuous) at TC = 100°C

28

A

IDM

(1)

1.

Pulse width limited by safe operating area

Drain Current (pulsed)

180

A

PTOT

Total Dissipation at TC = 25°C (steady state)

600

W

PTOT

Derating factor

5

W/°C

VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5kW)

7

KV

dv/dt (2)

2.

ISD ≤45A, di/dt £ 500 A/µs, VDD ≤V(BR)DSS.

Peak diode recovery voltage slope

8

V/ns

VISO

Insulation withstand voltage (AC-RMS) from all

four terminals to external heatsink

2500

V

Tj

Tstg

Operating junction temperature

Storage temperature

- 65 to 150

°C

Table 2.

Thermal data

Rthj-case

Thermal Resistance Junction-case Max

0.2

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

40

°C/W

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

45

A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 35 V)

1.2

J

유사한 부품 번호 - STE45NK80ZD

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STE45NK80ZD	287Kb / 10P	N-CHANNEL 800V - 0.11ohm - 45 A ISOTOP Super FREDMesh MOSFET

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STE45NK80ZD 데이터시트(PDF) 3 Page - STMicroelectronics

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