전자부품 데이터시트 검색엔진 |
|
STP3NB80 데이터시트(PDF) 3 Page - STMicroelectronics |
|
STP3NB80 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 9 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. T yp. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 400 V ID =1.3 A RG =4.7 Ω VGS =10 V 12 10 17 14 ns ns Qg Q gs Qgd Tot al Gate Charge Gat e-Source Charge Gat e-Drain Charge VDD =640 V ID =3 A VGS =10 V 17 6.5 7.5 24 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. T yp. Max. Unit tr(Voff) tf tc Off -volt age Rise Time Fall Time Cross-over Time VDD = 640 V ID =3 A RG =4.7 Ω VGS =10 V 15 17 22 21 24 31 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. T yp. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 2. 6 10. 4 A A VSD ( ∗) Forward On Volt age ISD =2.6 A VGS =0 1. 6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =2.6 A di/dt = 100 A/ µs VDD = 100 V Tj =150 oC 650 2.8 8.5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP STP3NB80/FP 3/9 |
유사한 부품 번호 - STP3NB80 |
|
유사한 설명 - STP3NB80 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |