STD5NK40Z-1 datasheet(2/13 Pages) STMICROELECTRONICS

부품명	STD5NK40Z-1

상세설명	N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

Download	13 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

Logo

2 / 13 page

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1

2/13

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Value

Unit

STP5NK40Z

STP5NK40ZFP

STD5NK40Z

STD5NK40Z-1

VDS

Drain-source Voltage (VGS =0)

400

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

400

V

VGS

Gate- source Voltage

± 30

V

ID

Drain Current (continuous) at TC = 25°C

3

3 (*)

3

A

ID

Drain Current (continuous) at TC = 100°C

1.9

1.9 (*)

1.9

A

IDM ( )

Drain Current (pulsed)

12

12 (*)

12

A

PTOT

Total Dissipation at TC = 25°C

45

20

45

W

Derating Factor

0.36

0.16

0.36

W/°C

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5K

Ω)

2800

V

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2500

-

V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55to150

°C

TO-220

TO-220FP

DPAK

Rthj-case

Thermal Resistance Junction-case Max

2.77

6.25

2.77

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

100

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

3A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID =IAR,VDD =50 V)

130

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

30

V

유사한 부품 번호 - STD5NK40Z-1

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD5NK40Z-1	608Kb / 13P	N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK

More results

유사한 설명 - STD5NK40Z-1

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STP7NK40Z	605Kb / 13P	N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET
	STD5NK40ZT4	608Kb / 13P	N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK
	STP3NK90Z	613Kb / 13P	N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET
	STP4NK50Z	664Kb / 13P	N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET
	STP4NK80Z	546Kb / 18P	N-channel 800V - 3廓 - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH??MOSFET
	STP4NK80Z	620Kb / 13P	N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET
	STP17NK40Z	394Kb / 10P	N-CHANNEL 400V - 0.23ohm - 15A TO-220/TO-220FP Zener-Protected SuperMESH?줡ower MOSFET
	STP11NK40Z	579Kb / 12P	N-CHANNEL 400V - 0.49ohm - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH?줡ower MOSFET
	STP5NK60Z	585Kb / 12P	N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH?줡ower MOSFET
	STP4NM60	548Kb / 12P	N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh?줡ower MOSFET

More results

STD5NK40Z-1 데이터시트(PDF) 2 Page - STMicroelectronics

STD5NK40Z-1 데이터시트(HTML) 2 Page - STMicroelectronics

유사한 부품 번호 - STD5NK40Z-1

유사한 설명 - STD5NK40Z-1

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

데이터시트 다운로드

링크 URL