STP6NA60FP datasheet(2/5 Pages) STMICROELECTRONICS

부품명	STP6NA60FP

상세설명	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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THERMAL DATA

Rthj-ca se

Rthj- amb

Rthc-si nk

Tl

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

3. 12

62. 5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current, Repetitive or Not -Repet itive

(pulse width limited by Tj max,

δ <1%)

6.5

A

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

215

mJ

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID =250

µAVGS =0

600

V

IDSS

Zero

Gate

Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc =100

oC

25

250

µA

IGSS

Gate-body

Leakage

Current (VDS =0)

VGS =

± 30 V

± 100

nA

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate

Threshold

Voltage

VDS =VGS

ID =250

µA

2.25

3

3.75

V

RDS(on)

St atic Drain-source On

Resistance

VGS =10V ID =2.5 A

1

1.2

Ω

ID(o n)

On St ate Drain Current

VDS >ID(on) xRDS(on)max

VGS =10 V

6. 5

A

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconduct ance

VDS >ID(on) xRDS(on) max

ID =3 A

3. 5

5.6

S

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

ReverseTransfer

Capacitance

VDS =25 V

f = 1 MHz

VGS = 0

1150

155

40

1550

210

55

pF

STP6NA60FP

2/5

유사한 부품 번호 - STP6NA60FP

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STP6NA60FI	206Kb / 10P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

More results

유사한 설명 - STP6NA60FP

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STP6NA60FP 데이터시트(PDF) 2 Page - STMicroelectronics

STP6NA60FP 데이터시트(HTML) 2 Page - STMicroelectronics

유사한 부품 번호 - STP6NA60FP

유사한 설명 - STP6NA60FP

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