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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF6641TRPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF6641TRPBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6641TRPbF 2 www.irf.com S D G Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Electrical Characteristic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 200 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 51 59.9 m Ω VGS(th) Gate Threshold Voltage 3.0 4.0 4.9 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 13 ––– ––– S Qg Total Gate Charge ––– 34 48 Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.7 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC Qgd Gate-to-Drain Charge ––– 9.5 14 Qgodr Gate Charge Overdrive ––– 14 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 11 ––– Qoss Output Charge ––– 12 ––– nC RG Gate Resistance ––– 1.0 ––– Ω td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 11 ––– td(off) Turn-Off Delay Time ––– 31 ––– ns tf Fall Time ––– 6.5 ––– Ciss Input Capacitance ––– 2290 ––– Coss Output Capacitance ––– 240 ––– pF Crss Reverse Transfer Capacitance ––– 46 ––– Coss Output Capacitance ––– 1780 ––– Coss Output Capacitance ––– 100 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 26 (Body Diode) A ISM Pulsed Source Current ––– ––– 37 (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 85 130 ns Qrr Reverse Recovery Charge ––– 320 480 nC ID = 5.5A VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V VDS = 10V, ID = 5.5A VDS = 100V TJ = 25°C, IF = 5.5A, VDD = 100V di/dt = 100A/µs TJ = 25°C, IS = 5.5A, VGS = 0V i showing the integral reverse p-n junction diode. VDS = VGS, ID = 150µA VDS = 200V, VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.5A i VDS = 16V, VGS = 0V VDD = 100V, VGS = 10VÃi VGS = 0V ƒ = 1.0MHz ID = 5.5A MOSFET symbol RG = 6.2Ω VDS = 25V Conditions VGS = 0V, VDS = 160V, f=1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz |
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