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FDS8878 데이터시트(PDF) 6 Page - Fairchild Semiconductor

부품명 FDS8878
상세설명  N-Channel PowerTrench짰 MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8878 데이터시트(HTML) 6 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
FDS8878 Rev. B
www.fairchildsemi.com
6
Figure 11.
0.8
1.0
1.2
1.4
1.6
TJ, JUNCTION TEMPERATURE (oC)
VGS = 10V, ID = 10.2A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 12.
10
1000
0.1
1
10
2000
30
VGS = 0V, f = 1MHz
CISS = CGS + CGD
COSS ≅ CDS + CGD
CRSS = CGD
VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain to Source
Voltage
Figure 13.
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
VDD = 15V
ID = 10.2A
ID = 1A
WAVEFORMS IN
DESCENDING ORDER:
03
69
12
15
18
Gate Charge Waveforms for Constant
Gate Currents
Figure 14. Forward Bias Safe Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
DC
10s
1s
100ms
10ms
1ms
100us
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125
oC/W
TA = 25
oC
Typical Characteristics T
J = 25°C unless otherwise noted


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