전자부품 데이터시트 검색엔진 |
|
FDS8876 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
|
FDS8876 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page ©2007 Fairchild Semiconductor Corporation FDS8876 Rev. B www.fairchildsemi.com 3 Switching Characteristics (VGS = 10V) tON Turn-On Time VDD = 15V, ID = 12.5A VGS = 10V, RGS = 10Ω - - 63 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 34 - ns td(OFF) Turn-Off Delay Time - 53 - ns tf Fall Time - 19 - ns tOFF Turn-Off Time - - 108 ns Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 12.5A - - 1.25 V ISD = 2.1A - - 1.0 V trr Reverse Recovery Time ISD = 12.5A, dISD/dt = 100A/µs - - 29 ns QRR Reverse Recovered Charge ISD = 12.5A, dISD/dt = 100A/µs - - 15 nC Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 14.5A, VDD = 30V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad. |
유사한 부품 번호 - FDS8876_07 |
|
유사한 설명 - FDS8876_07 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |