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STP9NA50FI 데이터시트(PDF) 3 Page - STMicroelectronics |
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STP9NA50FI 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 10 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =250 V ID =4.5 A RG =4.7 Ω VGS =10 V (see test circuit, figure 3) 18 25 25 35 ns ns (di/dt) on Turn-on Current Slope VDD =400 V ID =9 A RG =47 Ω VGS =10 V (see test circuit, figure 5) 200 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V ID =9 A VGS =10 V 56 9 26 75 nC nC nC SWITCHING OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =400 V ID =9 A RG =4.7 Ω VGS =10 V (see test circuit, figure 5) 15 15 25 20 20 35 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit ISD I SDM( •) Source-drain Current Source-drain Current (pulsed) 8.8 35 A A VSD ( ∗) Forward On Volt age ISD =9 A VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =9 A di/dt = 100 A/ µs VDD = 100 V Tj =150 oC (see test circuit, figure 5) 560 9 32 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220 STP9NA50/FI 3/10 |
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