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STP9NB50FP 데이터시트(PDF) 3 Page - STMicroelectronics |
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STP9NB50FP 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STP9NB50/FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD = 250 V, ID = 4.3 A RG = 4.7Ω VGS =10 V (see test circuit, Figure 3) 19 ns tr 11 ns Qg Total Gate Charge VDD = 400V, ID = 8.6 A, VGS = 10V 32 45 nC Qgs Gate-Source Charge 10.6 nC Qgd Gate-Drain Charge 13.7 nC Symbol Parameter Test Condit ions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 8.6 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 11.5 ns tf Fall Time 11 ns tc Cross-over Time 20 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 8.6 A ISDM (2) Source-drain Current (pulsed) 34.4 A VSD (1) Forward On Voltage ISD = 8.6 A, VGS =0 1.6 V trr Reverse Recovery Time ISD = 8.6 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 420 ns Qrr Reverse Recovery Charge 3.5 µC IRRM Reverse Recovery Current 16.5 A Safe Operating Area Safe Operating Area for TO-220FP |
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