FDS6299S Rev C1 (W)

SyncFET Schottky Body Diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in

parallel with PowerTrench MOSFET. This diode exhibits

similar characteristics to a discrete external Schottky

diode in parallel with a MOSFET. Figure 12 shows the

reverse recovery characteristic of the FDS6299S.

Figure 12. FDS6299S SyncFET body

diode reverse recovery characteristic.

Schottky barrier diodes exhibit significant leakage at high

temperature and high reverse voltage. This will increase

the power in the device.

0.00001

0.0001

0.001

0.01

0.1

0

5

10

15

20

25

30

Figure 13. SyncFET body diode reverse

leakage versus drain-source voltage and

temperature.

TIME : 12.5ns/div