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FDS8958A 데이터시트(PDF) 1 Page - Fairchild Semiconductor

부품명 FDS8958A
상세설명  Dual N & P-Channel PowerTrenchO MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2008 Fairchild Semiconductor Corporation
FDS8958A Rev F
3(W)
FDS8958A
Dual N & P-Channel PowerTrench®®®® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1:
N-Channel
7.0A, 30V
R
DS(on) = 0.028Ω @ VGS = 10V
R
DS(on) = 0.040Ω @ VGS = 4.5V
Q2:
P-Channel
-5A, -30V
R
DS(on) = 0.052Ω @ VGS = -10V
R
DS(on) = 0.080Ω @ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
S
D
S
S
SO-8
D
D
D
G
D1
D1
D2
D2
S1
G1
S2
G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
VDSS
Drain-Source Voltage
30
30
V
VGSS
Gate-Source Voltage
±20
±20
V
ID
Drain Current - Continuous
(Note 1a)
7
-5
- Pulsed
20
-20
A
PD
Power Dissipation for Dual Operation
2
2
Power Dissipation for Single Operation
(Note 1a)
1.6
1.6
(Note 1c)
0.9
0.9
W
EAS
Single Pulse Avalanche Energy
(Note 3)
54
13
mJ
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8958A
FDS8958A
13”
12mm
2500 units
tm
April 2008


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