STPR820 datasheet(2/6 Pages) STMICROELECTRONICS

부품명	STPR820

상세설명	ULTRA-FAST RECOVERY RECTIFIER DIODES

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Symbol

Parameters

Test conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 25

°CVR =VRRM

50

µA

Tj = 100

°C

0.6

mA

VF **

Forward voltage drop

Tj = 125

°CIF =8 A

0.99

V

Tj = 125

°CIF =16 A

1.20

Tj = 25

°CIF =16 A

1.25

Pulse test : * tp = 5 ms,

δ <2 %

** tp = 380

µs, δ <2 %

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Test conditions

Min.

Typ.

Max.

Unit

trr

Tj =25

°CIF = 0.5A

IR =1A

Irr = 0.25A

30

ns

tfr

Tj =25

°CIF =1A

VFR = 1.1 x VF max

tr = 10 ns

20

VFP

Tj =25

°CIF = 1A

tr = 10 ns

3V

RECOVERY CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AC

3.0

°C/W

ISOWATT220AC

5.5

THERMAL RESISTANCES

Fig. 2: Peak current versus form factor.

Fig. 1: Average forward power dissipation versus

average forward current.

STPR820D/F

2/6

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STPR820 데이터시트(PDF) 2 Page - STMicroelectronics

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