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FQPF12N60CT 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FQPF12N60CT 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page 2 www.fairchildsemi.com FQPF12N60CT Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 12A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQPF12N60CT FQPF12N60CT TO-220F -- -- 50 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A -- 0.53 0.65 Ω gFS Forward Transconductance VDS = 40 V, ID =6 A (Note 4) -- 13 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1760 2290 pF Coss Output Capacitance -- 182 235 pF Crss Reverse Transfer Capacitance -- 21 28 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 12A, RG = 25 Ω (Note 4, 5) -- 30 70 ns tr Turn-On Rise Time -- 85 180 ns td(off) Turn-Off Delay Time -- 140 290 ns tf Turn-Off Fall Time -- 90 190 ns Qg Total Gate Charge VDS = 480 V, ID = 12A, VGS = 10 V (Note 4, 5) -- 48 63 nC Qgs Gate-Source Charge -- 8.5 -- nC Qgd Gate-Drain Charge -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 12 A, dIF / dt = 100 A/µs (Note 4) -- 420 -- ns Qrr Reverse Recovery Charge -- 4.9 -- µC |
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