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STP8NM60 데이터시트(PDF) 4 Page - STMicroelectronics |
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STP8NM60 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STP8NM60, STD5NM60, STB8NM60 4/18 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 300 V, ID= 2.5 A, RG= 4.7 Ω, VGS=10 V (see Figure 17) 14 10 23 10 ns ns ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD= 480 V, ID= 5 A, RG= 4.7 Ω, VGS=10 V 7 10 17 ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 8 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 32 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 5A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, VDD=100 V di/dt = 100 A/µs, (see Figure 22) 300 1.95 13 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, VDD = 100 V di/dt = 100 A/µs, Tj=150 °C (see Figure 22) 445 3.00 13.5 ns µC A |
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