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1 / 18 page March 2008 Rev 3 1/18 18 STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 Ω - 12 A MDmesh™ II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This product is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Type VDSS (@Tjmax) RDS(on) max ID STB13NM50N 550 V 0.32 Ω 12 A STB13NM50N-1 550 V 0.32 Ω 12 A STF13NM50N 550 V 0.32 Ω 12 A(1) 1. Limited only by maximum temperature allowed STP13NM50N 550 V 0.32 Ω 12 A STW13NM50N 550 V 0.32 Ω 12 A TO-220 TO-220FP I²PAK D²PAK 1 2 3 1 2 3 1 2 3 1 3 1 2 3 TO-247 Table 1. Device summary Order codes Marking Package Packaging STB13NM50N B13NM50N D²PAK Tape and reel STB13NM50N-1 B13NM50N I²PAK Tube STF13NM50N F13NM50N TO-220FP Tube STP13NM50N P13NM50N TO-220 Tube STW13NM50N W13NM50N TO-247 Tube www.st.com |
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