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2SK1154-E 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SK1154-E 데이터시트(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1153, 2SK1154 Rev.2.00 Sep 07, 2005 page 4 of 6 5 4 3 2 1 0 0 40 80 120 160 Case Temperature TC (°C) –40 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test 3 A ID = 1 A 2 A Forward Transfer Admittance vs. Drain Current 5 2 1.0 0.5 0.05 0.1 0.2 1.0 2 5 Drain Current ID (A) 0.1 0.2 0.5 VDS = 10 V Pulse Test 75 °C –25 °C TC = 25°C Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) 1,000 500 100 50 20 10 200 0.05 0.1 0.2 0.5 1.0 2 5 di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 1,000 100 10 1 010 20 30 40 50 Drain to Source Voltage VDS (V) Coss Ciss Crss VGS = 0 f = 1 MHz Dynamic Input Characteristics 500 400 300 200 100 0 4 8 12 16 20 Gate Charge Qg (nc) 20 16 12 8 4 0 400 V VDS ID = 3 A VGS 250 V VDD = 400 V 250 V 100 V VDD = 100 V Switching Characteristics 500 100 50 20 10 5 200 0.05 0.1 0.2 0.5 1.0 2 5 Drain Current ID (A) tf td (on) tr td (off) VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % |
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