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2SK1697EYTR-E 데이터시트(PDF) 1 Page - Renesas Technology Corp |
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2SK1697EYTR-E 데이터시트(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.2.00 May 11, 2006 page 1 of 6 2SK1697 Silicon N-Channel MOS FET REJ03G1373-0200 (Previous: ADE-208-1313) Rev.2.00 May 11, 2006 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC – DC converter, motor drive, power switch, solenoid drive Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK ) R 4 3 2 1 D G S 1. Gate 2. Drain 3. Source 4. Drain Note: Marking is “EY”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 0.5 A Drain peak current ID(pulse) *1 1.5 A Body to drain diode reverse drain current IDR 0.5 A Channel dissipation Pch *2 1 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm) |
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