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2SK2007-E 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SK2007-E 데이터시트(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK2007 Rev.2.00 Sep 07, 2005 page 4 of 6 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Reverse Drain Current IDR (A) Body to Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics 0.5 0.4 0.3 0.2 0.1 0 I = 20 A D –40 0 80 120 40 5 A 10 A 160 VGS = 10 V Pulse Test Tc = 25 °C –25 °C 100 30 10 3 1 0.3 0.1 75 °C VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100 di/dt = 100 A/ s VGS = 0, Ta = 25°C 500 0.5 1 2 5 10 20 50 µ 200 100 50 20 10 5 10000 1000 100 1 Ciss Coss Crss VGS = 0 f = 1 MHz 010 20 30 40 50 500 400 300 200 100 0 20 16 12 8 4 0 ID = 20 A VDD = 50 V 100 V 200 V 0 20 40 60 80 100 VDD = 200 V 100 V 50 V tf tr td(off) 500 200 100 50 20 10 5 0.5 1 2 5 10 20 50 VGS = 10 V, VDD 30 V PW = 5 s, duty 1% µ = : < = td(on) |
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