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2SK2529-E 데이터시트(PDF) 3 Page - Renesas Technology Corp |
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2SK2529-E 데이터시트(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page 2SK2529 Rev.8.00 Sep 07, 2005 page 3 of 7 Main Characteristics Case Temperature TC (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 40 30 20 10 0 50 100 150 200 500 200 100 20 50 10 2 5 1 0.5 0.1 0.3 1 3 10 30 100 Operation in this area is limited by RDS(on) Ta = 25 °C 10 µs 1 ms PW = 10 m s (1shot) 100 80 60 40 20 0 Pulse Test 3.5 V 4 V 5 V 10 V 3 V VGS = 2.5 V 2 468 10 6 V 100 80 60 40 20 0 VDS = 10 V Pulse Test Tc = 75 °C 25 °C –25 °C 12 34 5 1.0 0.8 0.6 0.4 0.2 0 Pulse Test 24 6 810 ID = 50 A 20 A 10 A 1 10 100 1000 3 30 300 0.5 0.2 0.1 0.02 0.05 0.01 0.002 0.005 0.001 0.0005 VGS = 4 V 10 V Pulse Test |
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