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2SK2958 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SK2958 데이터시트(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK2958(L), 2SK2958(S) Rev.4.00 Sep 07, 2005 page 4 of 7 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 20 16 12 8 4 –40 0 40 80 120 160 0 VGS = 4 V 10 V Pulse Test 10, 20 A ID = 50 A 20 A 10 A 50 A 0.1 0.3 1 3 10 30 100 500 100 200 20 50 10 2 5 1 0.5 Tc = –25 °C 75 °C 25 °C VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100 010 20 30 40 50 3000 100000 10000 30000 50 40 30 20 10 0 20 16 12 8 4 80 160 240 320 400 0 1000 100 200 20 10 0.1 0.2 2 10 100 1000 500 100 200 20 50 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C 1000 300 20 1 100 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 75 A VGS VDS VDD = 5 V 10 V 25 V VDD = 25 V 10 V 5 V 0.5 5 5 2000 5000 500 50 50 VGS = 10 V, VDD = 10 V PW = 5 µs, duty < 1 % tr td(on) td(off) tf |
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