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2SC2734 데이터시트(PDF) 2 Page - Renesas Technology Corp |
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2SC2734 데이터시트(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page 2SC2734 Rev.2.00 Aug 10, 2005 page 2 of 7 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 20 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 11 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 3 — — V IE = 10 µA, IC = 0 Collector cutoff current ICBO — — 0.5 µA VCB = 10 V, IE = 0 Collector to emitter saturation voltage VCE(sat) — — 0.7 V IC = 10 mA, IB = 5 mA DC current transfer ratio hFE 20 90 200 VCE = 10 V, IC = 5 mA Gain bandwidth product fT 1.4 3.5 — GHz VCE = 10 V, IC = 10 mA Collector output capacitance Cob — 0.9 1.5 pF VCB = 10 V, IE = 0, f = 1 MHz Conversion gain CG — 15 — dB VCC = 6 V, IC = 2 mA, f = 900 MHz, fOSC = 930 MHz (0dBm), fout = 30 MHz Noise figure NF — 9 — dB VCC = 6 V, IC = 2 mA, f = 900 MHz, fOSC = 930 MHz (0dBm), fout = 30 MHz Oscillating output voltage VOSC — 140 — mV VCC = 6 V, IC = 5 mA, f = 930 MHz |
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