전자부품 데이터시트 검색엔진 |
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2SJ244 데이터시트(PDF) 3 Page - Renesas Technology Corp |
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2SJ244 데이터시트(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page 2SJ244 Rev.2.00 Sep 07, 2005 page 3 of 6 Main Characteristics Ambient Temperature Ta (°C) Maximum Channel Power Dissipation Curve Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Forward Transfer Characteristics –5 0 –1 –2 –3 –4 0–2 –4 –6 –8 –10 –5 0 –1 –2 –3 –4 0 –1–2–3–4–5 Tc = –25°C 25°C 75°C 2.0 0 0.5 1.0 1.5 0 50 100 150 200 VDS = –5 V Pulse Test –5 V –2.5 V –3.5 V –4.5 V –2 V –3 V –4 V VGS = –1.5 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 –10 PW = 1 ms (1 shot) Operation in this area is limited by RDS (on) Drain Current ID (A) Drain to Source on State Resistance vs. Drain Current 2 1 0.2 0.5 0.1 –0.5 –2 –5 –0.1 –1 10 –0.2 10 5 VGS = –4 V –2 V –3 V Pulse Test (on the alumina ceramic board) Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 20 10 2 5 1 0.2 0.5 –0.1 –0.2 –0.5 –1 –2 –5 –10 Tc = –25°C 75°C VDS = –5 V Pulse Test 25°C |
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