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STU7NB90 데이터시트(PDF) 1 Page - STMicroelectronics |
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1 / 9 page 1/9 May 2001 STU7NB90 STU7NB90I N-CHANNEL 900V - 1.1 Ω - 7.3 A Max220/Max220I PowerMesh™ MOSFET s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STU7NB90 900 V < 1.45 Ω 7.3 A STU7NB90I 900 V < 1.45 Ω 7.3 A Symbol Parameter Value Unit STU7NB90 STU7NB90I VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 900 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 7.3 7.3 (*) A ID Drain Current (continuos) at TC = 100°C 4.6 4.6 (*) A IDM (q) Drain Current (pulsed) 29.2 29.2 (*) A PTOT Total Dissipation at TC = 25°C 170 60 W Derating Factor 1.36 0.47 W/°C dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1) ISD ≤7.3 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Current Limited by Package INTERNAL SCHEMATIC DIAGRAM Max220 Max220I 1 2 3 |
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