2SD1471 datasheet(4/8 Pages) RENESAS

부품명	2SD1471

상세설명	Silicon NPN Planar, Darlington

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2SD1471

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

40

V

Collector to emitter voltage

V

CEO

30

V

Emitter to base voltage

V

EBO

10

V

Collector current

I

C

300

mA

Collector peak current

i

C(peak)*

1

500

mA

Collector power dissipation

P

C*

2

1W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. Pulse

≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

40

—

V

I

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

V

(BR)CEO

30

—

V

I

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

10

—

V

I

E = 10 µA, IC = 0

Collector cutoff current

I

CBO

——

1

µAV

CB = 30 V, IE = 0

I

CEO

——

10

µAV

CE = 24 V, RBE = ∞

DC current transfer ratio

h

FE1*

1

2000

—

100000

V

CE = 5 V, IC = 10 mA*

2

h

FE2*

1

3000

—

V

CE = 5 V, IC = 100 mA*

2

h

FE3*

1

3000

—

V

CE = 5 V, IC = 400 mA*

2

Collector to emitter saturation

voltage

V

CE(sat)

—

1.5

V

I

C = 100 mA, IB = 0.1 mA*

2

Base to emitter saturation

voltage

V

BE(sat)

—

2.0

V

I

C = 100 mA, IB = 0.1 mA*

2

Notes: 1. The 2SD1471 is grouped by h

FE as follows.

2. Pulse test

Mark

DT

ET

h

FE1

2000 to 100000 5000 to 100000

h

FE2

3000 min

10000 min

h

FE3

3000 min

10000 min

유사한 부품 번호 - 2SD1471

제조업체	부품명	데이터시트	상세설명
Hitachi Semiconductor	2SD1471	32Kb / 6P	Silicon NPN Planar, Darlington

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2SD1471 데이터시트(PDF) 4 Page - Renesas Technology Corp

2SD1471 데이터시트(HTML) 4 Page - Renesas Technology Corp

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