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2SD1606 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SD1606 데이터시트(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SD1606 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 120 V Collector to emitter voltage V CEO 120 V Emitter to base voltage V EBO 7V Collector current I C 6A Collector peak current I C(peak) 12 A Collector power dissipation P C* 1 40 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C C to E diode forward current I D* 1 6A Note: 1. Value at T C = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V (BR)CEO 120 — — V I C = 25 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 7— — VI E = 50 mA, IC = 0 Collector cutoff current I CBO — — 100 µAV CB = 120 V, IE = 0 I CEO —— 10 µAV CE = 100 V, RBE = ∞ DC current transfer ratio h FE 1000 — 20000 V CE = 3 V, IC = 3 A* 1 Collector to emitter saturation V CE(sat)1 — — 1.5 V I C = 3 A, IB = 6 mA* 1 voltage V CE(sat)2 — — 3.0 V I C = 6 A, IB = 60 mA* 1 Base to emitter saturation V BE(sat)1 — — 2.0 V I C = 3 A, IB = 6 mA* 1 voltage V BE(sat)2 — — 3.5 V I C = 6 A, IB = 60 mA* 1 C to E diode forward voltage V D — — 3.0 V I D = 6 A* 1 Turn on time t on — 0.6 — µsI C = 3 A, IB1 = –IB2 = 6 mA Storage time t stg — 7.0 — µs Fall time t f — 2.0 — µs Note: 1. Pulse test. |
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