전자부품 데이터시트 검색엔진 |
|
STB80NF55-06 데이터시트(PDF) 4 Page - STMicroelectronics |
|
STB80NF55-06 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP 4/17 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 55 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 23 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 40A 0.005 0.0065 Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 40A 150 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 4400 1020 350 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 44V, ID = 80A VGS =10V 142 29 60.5 189 nC nC nC Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 50 V, ID= 40A, RG=4.7Ω, VGS=10V (see Figure 15) 27 155 125 65 ns ns ns ns |
유사한 부품 번호 - STB80NF55-06 |
|
유사한 설명 - STB80NF55-06 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |