2KBP005M thru 2KBP10M, 3N253 thru 3N259

Vishay General Semiconductor

Document Number: 88532

Revision: 15-Apr-08

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.01

0.1

1

10

100

T

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

0

20

40

60

80

100

0.01

0.1

1

10

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

Figure 5. Typical Junction Capacitance Per Diode

0.1

1

10

100

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

Polarity shown on front side of case: positive lead by beveled corner

0.125 x 45°

(3.2)

0.600 (15.24)

0.560 (14.22)

0.034 (0.86)

0.028 (0.76)

0.105 (2.67)

0.085 (2.16)

0.160 (4.1)

0.140 (3.6)

0.060

(1.52)

0.460 (11.68)

0.50 (12.7) MIN.

0.420 (10.67)

0.500 (12.70)

0.460 (11.68)

0.60

(15.2)

MIN.

DIA.

0.200 (5.08)

0.180 (4.57)

Case Style KBPM