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3 / 12 page 3/12 STP7NK30Z - STF7NK30Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Table 8: Dynamic Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1 mA, VGS = 0 300 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.5 A 0.80 0.90 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15 V, ID =2.5 A 2.5 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 380 74 15 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 30 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 425 V, ID = 2.8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) 11 25 20 10 ns ns ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 320V, ID = 5A, RG =4.7Ω, VGS = 10V (see Figure 17) 8.5 8.5 20 ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 320V, ID = 5 A, VGS = 10V (see Figure 21) 13 4.5 7.6 17 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 5 20 A A VSD (1) Forward On Voltage ISD = 5 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs VDD = 40, Tj = 150°C (see Figure 19) 154 716 9.3 ns nC A |
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