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STP7NK30Z 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STP7NK30Z
상세설명  N-CHANNEL 300V - 0.80廓 - 5A TO-220/TO-220FP Zener-Protected SuperMESH?줞OSFET
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STP7NK30Z - STF7NK30Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1 mA, VGS = 0
300
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 50µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 2.5 A
0.80
0.90
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =15 V, ID =2.5 A
2.5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
380
74
15
pF
pF
pF
Coss eq. (3)
Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V
30
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 425 V, ID = 2.8 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
11
25
20
10
ns
ns
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 320V, ID = 5A,
RG =4.7Ω, VGS = 10V
(see Figure 17)
8.5
8.5
20
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 320V, ID = 5 A,
VGS = 10V
(see Figure 21)
13
4.5
7.6
17
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
5
20
A
A
VSD (1)
Forward On Voltage
ISD = 5 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs
VDD = 40, Tj = 150°C
(see Figure 19)
154
716
9.3
ns
nC
A


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