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STP90NS04ZC 데이터시트(PDF) 4 Page - STMicroelectronics |
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4 / 13 page Electrical characteristics STP90NS04ZC 4/13 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DG Clamped voltage ID = 1mA, VGS= 0 33 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 16V 1µA IGSS Gate body leakage current (VDS = 0) VGS = ±10V 2µA VGSS Gate-source breakdown voltage IGS =±100µA 18 25 V VGS(th) Gate threshold voltage VDS= VGS, ID = 1mA 23 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 40A 56 m Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 40A 100 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 3400 1250 450 pF pF pF tr(Voff) tf tc Off voltage rise time Fall time Cross-over time VCLAMP=32V, ID=80A, VGS=10V, RG=4.7Ω (see Figure 18) 230 140 295 ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=20V, ID = 80A VGS =10V (see Figure 19) 100 25 36 135 nC nC nC RG Internal gate resistor 14 Ω |
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