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8TQ080PBF 데이터시트(PDF) 2 Page - Vishay Siliconix |
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2 / 6 page www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94265 2 Revision: 06-Jun-08 8TQ...PbF Series Vishay High Power Products Schottky Rectifier, 8 A Note (1) Pulse width < 300 µs, duty cycle < 2 % ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop See fig. 1 VFM (1) 8 A TJ = 25 °C 0.72 V 16 A 0.88 8 A TJ = 125 °C 0.58 16 A 0.69 Maximum reverse leakage current See fig. 2 IRM (1) TJ = 25 °C VR = rated VR 0.55 mA TJ = 125 °C 7 Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 500 pF Typical series inductance LS Measured lead to lead 5 mm from package body 8 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg - 55 to 175 °C Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 2.0 °C/W Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 Approximate weight 2g 0.07 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in) maximum 12 (10) Marking device Case style TO-220AC 8TQ060 8TQ080 8TQ100 |
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