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IRF630 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IRF630 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91031 2 S-81240-Rev. A, 16-Jun-08 IRF630, SiHF630 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -1.7 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 200 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.24 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 µA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 5.4 Ab - - 0.40 Ω Forward Transconductance gfs VDS = 50 V, ID = 5.4 A 3.8 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 800 - pF Output Capacitance Coss - 240 - Reverse Transfer Capacitance Crss -76 - Total Gate Charge Qg VGS = 10 V ID = 5.9 A, VDS = 160 V, see fig. 6 and 13b -- 43 nC Gate-Source Charge Qgs -- 7.0 Gate-Drain Charge Qgd -- 23 Turn-On Delay Time td(on) VDD = 100 V, ID = 5.9 A, RG = 12 Ω, RD = 16 Ω, see fig. 10b -9.4 - ns Rise Time tr -28 - Turn-Off Delay Time td(off) -39 - Fall Time tf -20 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 9.0 A Pulsed Diode Forward Currenta ISM -- 36 Body Diode Voltage VSD TJ = 25 °C, IS = 9.0 A, VGS = 0 Vb -- 2.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 5.9 A, dI/dt = 100 A/μs - 170 340 ns Body Diode Reverse Recovery Charge Qrr -1.1 2.2 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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