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IRF634NSTRR 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IRF634NSTRR 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91033 2 S-Pending-Rev. A, 19-Jun-08 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 9.5 mH, RG = 25 Ω, IAS = 4.8 A, VGS = 10 V. c. 1.6 mm from case. d. This is only applied to TO-220 package. e. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material). Notes a. This is only applied to TO-220 package. b. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material). Maximum Power Dissipation TC = 25 °C PD 88 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.8 Peak Diode Recovery dV/dt dV/dt 7.3 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300c Mounting Torqued 6-32 or M3 screw 10 lbf · in 1.1 N · m THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambienta RthJA -62 °C/W Maximum Junction-to-Ambient (PCB Mount)b RthJA -40 Maximum Junction-to-Case (Drain) RthJC -1.7 Case-to-Sink, Flat, Greased Surfacea RthCS 0.50 - ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 250 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V - - 25 µA VDS = 200 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.8 Ab - - 0.435 Ω Forward Transconductance gfs VDS = 50 V, ID = 4.8 Ab 5.4 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 620 - pF Output Capacitance Coss -84 - Reverse Transfer Capacitance Crss -23 - Total Gate Charge Qg VGS = 10 V ID = 4.8 A, VDS = 200 V, see fig. 6 and 13b -- 34 nC Gate-Source Charge Qgs -- 6.5 Gate-Drain Charge Qgd -- 16 Turn-On Delay Time td(on) VDD = 125 V, ID = 4.8 A, RG = 1.3 Ω, see fig. 10b -8.4 - ns Rise Time tr -16 - Turn-Off Delay Time td(off) -28 - Fall Time tf -15 - |
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