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IRF644NSTRR 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IRF644NSTRR 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91038 2 S-Pending-Rev. A, 19-Jun-08 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 5.0 µH, RG = 25 Ω IAS = 8.4 A (see fig. 12). c. ISD ≤ 8.4 A, dI/dt ≤ 378 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. This is a calculated value limited to TJ = 175 °C. Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambientc RthJA -62 °C/W Case-to-Sink, Flat, Greased Surfacec RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -1.0 Maximum Junction-to-Ambient (PCB Mount)d RthJA -40 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 250 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V - - 25 µA VDS = 200 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8.4 Ab - - 0.240 Ω Forward Transconductance gfs VDS = 50 V, ID = 8.4 Ab 8.8 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 -1060 - pF Output Capacitance Coss -140 - Reverse Transfer Capacitance Crss -38 - Total Gate Charge Qg VGS = 10 V ID = 8.4 A, VDS = 200 V, see fig. 6 and 13b -- 54 nC Gate-Source Charge Qgs -- 9.2 Gate-Drain Charge Qgd -- 26 Turn-On Delay Time td(on) VDD = 125 V, ID = 8.4 A, RG = 6.2 Ω, VGS = 10 V, see fig. 10b -10 - ns Rise Time tr -21 - Turn-Off Delay Time td(off) -30 - Fall Time tf -17 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - D S G |
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