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IRFBC30L 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFBC30L 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91111 www.vishay.com S-Pending-Rev. A, 10-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix FEATURES • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, RG = 25 Ω, IAS = 3.6 A (see fig. 12). c. ISD ≤ 3.6 A, dI/dt ≤ 60 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFBC30/SiHFBC30 data and test conditions. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω)VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRFBC30SPbF IRFBC30STRLPbFa IRFBC30LPbF SiHFBC30S-E3 SiHFBC30STL-E3a SiHFBC30L-E3 SnPb IRFBC30S - IRFBC30L SiHFBC30S - SiHFBC30L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 20 Continuous Drain Currente VGS at 10 V TC = 25 °C ID 3.6 A TC = 100 °C 2.3 Pulsed Drain Currenta, e IDM 14 Linear Derating Factor 0.59 W/°C Single Pulse Avalanche Energyb, e EAS 290 mJ Avalanche Currenta IAR 3.6 A Repetiitive Avalanche Energya EAR 7.4 mJ Maximum Power Dissipation TA = 25 °C PD 3.1 W TC = 25 °C 74 Peak Diode Recovery dV/dtc, e dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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