Document Number: 91121

www.vishay.com

S-Pending-Rev. A, 23-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L

Vishay Siliconix

FEATURES

• Surface Mount (IRFBF20S/SiHFBF20S)

• Low-Profile Through-Hole (IRFBF20L/SiHFBF20L)

• Available

in

Tape

and

Reel

(IRFBF20S/SiHFBF20S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs form Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

the accommodating die sizes up to HEX-4. It provides the

highest

power

capability

and

the

lowest

possible

on-resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0 W in a typical surface mount application. The

through-hole version (IRFBF20L/SiHFBF20L) is available for

low-profile applications.

Note

a. See device orientation.

PRODUCT SUMMARY

900

8.0

38

4.7

21

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRFBF20SPbF

IRFBF20LPbF

SiHFBF20S-E3

SiHFBF20L-E3

SnPb

IRFBF20S

IRFBF20L

SiHFBF20S-E3

SiHFBF20L

PARAMETER

SYMBOL

LIMIT

UNIT

900

V

± 20

Continuous Drain Current

1.7

A

1.1

6.8

Linear Derating Factor

0.43

W/°C

180

mJ

1.7

A

5.4

mJ

Maximum Power Dissipation

54

W

3.1

dV/dt

1.5

V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply