전자부품 데이터시트 검색엔진 |
|
TDA7296V 데이터시트(PDF) 8 Page - STMicroelectronics |
|
TDA7296V 데이터시트(HTML) 8 Page - STMicroelectronics |
8 / 13 page INTRODUCTION In consumer electronics, an increasing demand has arisen for very high power monolithic audio amplifiers able to match, with a low cost the per- formance obtained from the best discrete de- signs. The task of realizing this linear integrated circuit in conventional bipolar technology is made ex- tremely difficult by the occurence of 2nd break- down phenomenon. It limits the safe operating area (SOA) of the power devices, and as a con- sequence, the maximum attainable output power, especially in presence of highly reactive loads. Moreover, full exploitation of the SOA translates into a substantial increase in circuit and layout complexity due to the need for sophisticated pro- tection circuits. To overcome these substantial drawbacks, the use of power MOS devices, which are immune from secondary breakdown is highly desirable. The device described has therefore been devel- oped in a mixed bipolar-MOS high voltage tech- nology called BCD 80. 1) Output Stage The main design task one is confronted with while developing an integrated circuit as a power op- erational amplifier, independently of the technol- ogy used, is that of realising the output stage. The solution shown as a principle schematic by Fig 15 represents the DMOS unity-gain output buffer of the TDA7296. This large-signal, high-power buffer must be ca- pable of handling extremely high current and volt- age levels while maintaining acceptably low har- monic distortion and good behaviour over fre- quency response; moreover, an accurate control of quiescent current is required. A local linearizing feedback, provided by differen- tial amplifier A, is used to fullfil the above require- ments, allowing a simple and effective quiescent current setting. Proper biasing of the power output transistors alone is however not enough to guarantee the ab- sence of crossover distortion. While a linearization of the DC transfer charac- teristic of the stage is obtained, the dynamic be- haviour of the system must be taken into account. A significant aid in keeping the distortion contrib- uted by the final stage as low as possible is pro- vided by the compensation scheme, which ex- ploits the direct connection of the Miller capacitor at the amplifier’s output to introduce a local AC feedback path enclosing the output stage itself. 2) Protections In designing a power IC, particular attention must be reserved to the circuits devoted to protection of the device from short circuit or overload condi- tions. Due to the absence of the 2nd breakdown phe- nomenon, the SOA of the power DMOS transis- tors is delimited only by a maximum dissipation curve dependent on the duration of the applied stimulus. In order to fully exploit the capabilities of the power transistors, the protection scheme imple- mented in this device combines a conventional SOA protection circuit with a novel local tempera- ture sensing technique which ” dynamically” con- trols the maximum dissipation. Figure 15: Principle Schematic of a DMOS unity-gain buffer. TDA7296 8/13 |
유사한 부품 번호 - TDA7296V |
|
유사한 설명 - TDA7296V |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |